description: the central semiconductor CMXD4448 type contains three (3) isolated high speed silicon switching diodes, manufactured by the epitaxial planar process, epoxy molded in a super-mini surface mount package, designed for applications requiring high speed switching applications. marking code is x48. maximum ratings (t a =25c) symbol units continuous reverse voltage v r 75 v peak repetitive reverse voltage v rrm 100 v continuous forward current i f 250 ma peak repetitive forward current i frm 250 ma forward surge current, tp=1 sec. i fsm 4000 ma forward surge current, tp=1 sec. i fsm 1000 ma power dissipation p d 350 mw operating and storage junction temperature t j ,t stg -65 to +150 c thermal resistance ja 357 c/w electrical characteristics per diode (t a =25c unless otherwise noted) symbol test conditions min max units i r v r =20v 25 na bv r i r =5.0a 75 v bv r i r =100a 100 v v f i f =100ma 1.0 v c t v r =0, f=1 mhz 4.0 pf t rr i r =i f =10ma, r l =100 ? rec. to 1.0ma 4.0 ns CMXD4448 super-mini triple isolated surface mount high speed switching diode sot-26 case central semiconductor corp. tm r1 ( 14-sept 2000)
lead code 1) anode 1 2) anode 2 3) anode 3 4) cathode 3 5) cathode 2 6) cathode 1 central semiconductor corp. tm mechanical outline - sot -26 case CMXD4448 super-mini triple isolated surface mount high speed switching diode all dimensions in inches (mm) pin configuration r1 ( 14-sept 2000)
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